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| savantic semiconductor product specification silicon npn power transistors 2SC1617 description with to-3 package high voltage: v cbo(min) :300v wide safe oprating area applications for b/w white tv horizontal output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a i e emitter current -7 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1617 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 100 v v cesat collector-emitter saturation voltage i c =5a;i b =0.5 a 1.2 v v besat base-emitter saturation voltage i c =5a;i b =0.5 a 1.5 v i cbo collector cut-off current v cb =250v; i e =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 30 150 h fe-2 dc current gain i c =7a ; v ce =5v 15 f t transition frequency i c =0.5a ; v ce =5v 10 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SC1617 package outline fig.2 outline dimensions |
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